| PART |
Description |
Maker |
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJK0348DPA10 RJK0348DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HAT2070R |
12 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJE0603JPE-00-J3 RJE0603JPE-15 |
50 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
Silicon P Channel MOS FET Series Power Switching
|
Renesas Electronics Corporation
|
| RJK0380DPA-00-J53 RJK0380DPA10 |
45 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
| RJK6006DPD RJK6006DPD-00-J2 RJK6006DPD-15 |
Silicon N Channel MOS FET High Speed Power Switching
5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET MP-3A, SC-63, 3 PIN
|
Renesas Electronics Corporation
|
| RQJ0602EGDQS RQJ0602EGDQSTL-E |
1.5 A, 60 V, 0.868 ohm, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, SC-62, UPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
|
